Multilayer graphene-based flash memory

被引：1

作者：

Novikov Y.N. ^{[1
]}

Gritsenko V.A. ^{[1
,2
]}

Krasnikov G.Y. ^{[3
]}

Orlov O.M. ^{[3
]}

机构：

[1] Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Moscow

[2] Novosibirsk State University, Novosibirsk, Moscow

[3] Scientific Research Institute of Molecular Electronics, Moscow

来源：

Russian Microelectronics | 2016年 / 45卷 / 01期

基金：

俄罗斯科学基金会;

关键词：

Charge storage characteristic - Memory element - Multilayer graphene;

D O I：

10.1134/S1063739715060050

中图分类号：

学科分类号：

摘要：

For the memory element based on a Si/HfO2/multilayer graphene/SiO2/Si structure, the write/erase and charge storage characteristics are evaluated. A sufficiently large work function of electrons in multilayer graphene (MLG) makes it possible to increase the time of storing the charge injected into it. Using MLG in flash memory devices allows one to increase the speed and/or reduce the voltage of reprogramming such devices. © 2016, Pleiades Publishing, Ltd.

引用

页码：63 / 67

页数：4

共 3 条

[1]

Hong A.J., Song K.B., Yu H.S., Allen M.J., Kim J., Fowler J.D., Wassei J.K., Park Y., Wang Y., Zou J., Kaner R.B., Weiller B.H., Wang K.L., Graphene flash memory, ACS Nano, 5, pp. 7812-7817, (2011)

[2]

Gritsenko V.A., Nasyrov K.A., Gritsenko D.V., Novikov Y.N., Aseev A.L., Li D.K., Li D.-V., Kim C.V., A new memory element based on silicon nanoclusters in a ZrO<sub>2</sub> insulator with a high permittivity for electrically erasable read only memory, Semiconductor, 39, pp. 716-721, (2005)

[3]

Song S.M., Park J.K., Sul O.J., Cho B.J., Determination of work function of graphene under a metal electrode and its role in contact resistance, Nano Lett., 12, pp. 3887-3892, (2012)

← 1 →