Photoelectric properties of photodetectors based on silicon-platinum silicide schottky barriers with a highly-doped surface layer

被引：4

作者：

Voitsekhovskii A.V. ^{[1
]}

Kokhanenko A.P. ^{[1
]}

Nesmelov S.N. ^{[1
]}

Lyapunov S.I. ^{[1
]}

Komarov N.V. ^{[1
]}

机构：

[1] Siberian Physical-Technical Institute, Tomsk State University

来源：

Russian Physics Journal | 2001年 / 44卷 / 11期

关键词：

Silicon; Platinum; Surface Layer; Noise Characteristic; Photoelectric Property;

D O I：

10.1023/A:1015393305423

中图分类号：

学科分类号：

摘要：

We have calculated the spectral, threshold, and noise characteristics of p-Si-PtSi photodetectors with highly-doped surface layers produced by molecular-beam epitaxy and short-pulse ion implantation by a recoil method. © 2001 Plenum Publishing Corporation.

引用

页码：1139 / 1151

页数：12

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