Perfection and homogeneity of space-grown GaSb:Te crystals

被引：0
作者：
A. E. Voloshin
T. Nishinaga
P. Ge
机构：
[1] Russian Academy of Sciences,Shubnikov Institute of Crystallography
[2] Meijo University,Department of Materials Science and Engineering, Faculty of Science and Technology
[3] Chinese Academy of Sciences,Institute of Physics
来源：
Crystallography Reports | 2002年 / 47卷
关键词：
Crystallization; Convection; GaSb; Structural Perfection; Marangoni Convection;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A Te-doped GaSb crystal grown by the method of directed crystallization under microgravitation has been studied by X-ray topography. It is shown that the structural perfection of the crystal part grown without contact with the ampule walls is substantially higher than the structural perfection of the crystals grown under terrestrial conditions. The distribution of a Te dopant in the crystal is studied by quantitative X-ray topography, and it is shown that, if the gap between the growing crystal and the ampule is small, the Marangoni convection in the melt can be less intense than the convection provided by residual microgravitation. The relation between the formation of a flat face on the crystallization front (faceting) and the formation of twins is also established.
引用
收藏
页码：S136 / S148
相关论文
共 22 条
  • [21] Effect of gravitation vector orientation relative to the solidification front on the micro- and macrohomogeneity of semiconductor crystals grown under terrestrial and space conditions
    V. I. Strelov
    B. G. Zakharov
    V. K. Artemiev
    Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2009, 3 : 98 - 104
  • [22] Effect of gravitation vector orientation relative to the solidification front on the micro- and macrohomogeneity of semiconductor crystals grown under terrestrial and space conditions
    Strelov, V. I.
    Zakharov, B. G.
    Artemiev, V. K.
    JOURNAL OF SURFACE INVESTIGATION, 2009, 3 (01): : 98 - 104
123