Physical properties of bulk single-crystal wafers of gallium nitride

被引：0
|
作者：
V. A. Ivantsov
V. A. Sukhoveev
V. I. Nikolaev
I. P. Nikitina
V. A. Dmitriev
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physico
来源：
Physics of the Solid State | 1997年 / 39卷
关键词：
Spectroscopy; State Physics; Absorption Spectrum; Nitride; Structural Analysis;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A study has been performed of the crystalline structure and optical characteristics of single crystals of gallium nitride (GaN). The crystals were grown from a gallium-based flux. X-ray structural analysis showed that the crystals have wurzite structure 2H-GaN. From their luminescence characteristics and optical absorption spectra the crystals are similar to 2H-GaN epitaxial layers described in the literature.
引用
收藏
页码：763 / 765
页数：2
相关论文
共 50 条
  • [31] ISOTOPE EFFECTS ON BORON PHOSPHIDE SINGLE-CRYSTAL WAFERS
    KUMASHIRO, Y
    OKADA, Y
    OKUMURA, H
    JOURNAL OF CRYSTAL GROWTH, 1993, 132 (3-4) : 611 - 613
  • [32] Defect content evaluation in single-crystal AIN wafers
    Bondokov, Robert T.
    Morgan, Kenneth E.
    Shetty, Raj
    Liu, Wayne
    Slack, Glen A.
    Goorsky, Mark
    Schowalter, Leo J.
    GAN, AIN, INN AND RELATED MATERIALS, 2006, 892 : 763 - +
  • [33] A facility for plastic deformation of germanium single-crystal wafers
    Lebech, B
    Theodor, K
    Breiting, B
    Kealey, PG
    Hauback, B
    Lebech, J
    Sorensen, SA
    Clausen, KN
    PHYSICA B, 1997, 241 : 204 - 206
  • [34] Strength of Silicon Single-Crystal Wafers for Solar Cells
    Shpeizman, V. V.
    Nikolaev, V., I
    Pozdnyakov, A. O.
    Bobyl, A., V
    Timashov, R. B.
    Averkin, A., I
    TECHNICAL PHYSICS, 2020, 65 (01) : 73 - 77
  • [35] Printable single-crystal silicon micro/nanoscale ribbons, platelets and bars generated from bulk wafers
    Baca, Alfred J.
    Meitl, Matthew A.
    Ko, Heung Cho
    Mack, Shawn
    Kim, Hoon-Sik
    Dong, Jingyan
    Ferreira, Placid M.
    Rogers, John A.
    ADVANCED FUNCTIONAL MATERIALS, 2007, 17 (16) : 3051 - 3062
  • [36] ELASTIC MODULI OF SINGLE-CRYSTAL GALLIUM ARSENIDE
    BATEMAN, TB
    MCSKIMIN, HJ
    WHELAN, JM
    JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) : 544 - 545
  • [37] Bulk gallium oxide single crystal growth
    Tao, Xutang
    JOURNAL OF SEMICONDUCTORS, 2019, 40 (01)
  • [38] High-Quality Single-Crystal Piezoelectric Aluminum Nitride Grown on Gallium Nitride Transition Layer on Sapphire Substrate
    Lin, Binghui
    Liu, Yan
    Xu, Qinwen
    Tong, Xin
    Nian, Laixia
    Liu, Wenjuan
    Soon, Bo Woon
    Cai, Yao
    Sun, Chengliang
    2022 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IEEE IUS), 2022,
  • [39] Bulk gallium oxide single crystal growth
    Xutang Tao
    Journal of Semiconductors, 2019, 40 (01) : 9 - 10
  • [40] SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES
    MANASEVIT, HM
    APPLIED PHYSICS LETTERS, 1968, 12 (04) : 156 - +
12345