Physical properties of bulk single-crystal wafers of gallium nitride

被引：0
|
作者：
V. A. Ivantsov
V. A. Sukhoveev
V. I. Nikolaev
I. P. Nikitina
V. A. Dmitriev
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physico
来源：
Physics of the Solid State | 1997年 / 39卷
关键词：
Spectroscopy; State Physics; Absorption Spectrum; Nitride; Structural Analysis;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A study has been performed of the crystalline structure and optical characteristics of single crystals of gallium nitride (GaN). The crystals were grown from a gallium-based flux. X-ray structural analysis showed that the crystals have wurzite structure 2H-GaN. From their luminescence characteristics and optical absorption spectra the crystals are similar to 2H-GaN epitaxial layers described in the literature.
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页码：763 / 765
页数：2
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