Electrical properties of ZnSe/GaAs (100) heterostructures grown by photostimulated vapor-phase epitaxy

被引：0
|
作者：
A. V. Kovalenko
机构：
[1] Dnepropetrovsk State University,
来源：
Semiconductors | 1997年 / 31卷
关键词：
GaAs; Electrical Property; Charge Carrier; Magnetic Material; Substrate Temperature;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Epitaxial layers of ZnSe were grown on GaAs (100) by photostimulated vapor-phase epitaxy, using a He-Cd laser (power P⋍1 mW/cm2, hν=2.807 eV) at a substrate temperature of T= (175–300) K. The temperature dependences of the mobility of the majority charge carriers were studied in layers doped during growth, using such sources as AlCl3, Zn, Al, and Ga. Based on an analysis of the thermally stimulated current and thermally stimulated depolarization curves, parameters were established for seven deep local levels that have a substantial effect on the electrical characteristics of the heterostructures.
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页码：8 / 10
页数：2
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