High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel

被引：0

作者：

A. I. Mikhaylov

A. V. Afanasyev

V. A. Ilyin

V. V. Luchinin

S. A. Reshanov

A. Schöner

机构：

[1] Saint Petersburg Electrotechnical University “LETI”,

[2] Ascatron AB,undefined

来源：

Semiconductors | 2020年 / 54卷

关键词：

4; -SiC; epitaxy; transistor channel; MOSFET;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：122 / 126

页数：4

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