Development of highly efficient mosaic photodetectors based on arrays of photosensitive elements

This paper substantiates laser scribing conditions for fabricating mosaic photodetectors based on molecular beam epitaxial (MBE) p-type HgCdTe films on GaAs substrates without loss of image information at a spacing of photosensitive elements (10 µm in diameter) of not less than 46 µm. A scribing technique for linear array photosensitive elements of dimension 4×288 p-n junctions spaced at 56 µm intervals is described in which a two-level depth groove is formed in several passes. In the region of p-n junctions, the groove is formed by radiation with an average power of 1.4 mW, and outside this region, it is formed by radiation with an average power of 2 mW. The groove has varying depth: outside the p-n junction region, the grove is 120 µm deep and 22 µm wide, and in the junction region, it is 26 µm deep and 18 µm wide. It is shown that the laser radiation effect does not lead to accelerated degradation of the electrical parameters of the p-n junctions