Magnetization Reversal by Electrical Spin Injection in Ferromagnetic (Ga,Mn)As-Based Magnetic Tunnel Junctions

被引：0
作者：
Rai Moriya
Kohei Hamaya
Akira Oiwa
Hiro Munekata
机构：
[1] Tokyo Institute of Technology,Imaging Science and Engineering Laboratory
[2] Tokyo Institute of Technology,Department of Innovative and Engineered Materials
[3] PRESTO,undefined
[4] Japan Science and Technology Agency,undefined
来源：
Journal of Superconductivity | 2005年 / 18卷
关键词：
III-V magnetic alloy semiconductors; spintronics; (Ga,Mn)As; magnetic tunnel junction; MBE;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We report current-induced magnetization reversal in a ferromagnetic semiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As prepared by molecular beam epitaxy on a p-GaAs(001) substrate. A change in magneto-resistance that is asymmetric with respect to the current direction is found with the excitation current of 106 A/cm2. Contributions of both unpolarized and spin-polarized components are examined, and we conclude that the partial magnetization reversal occurs in the (Ga,Mn)As layer having smaller magnetization with the spin-polarized tunneling current of 105 A/cm2.
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页码：3 / 7
页数：4
相关论文
共 68 条
[1]  
Berger L.(1992)undefined J. Appl. Phys. 71 2721-undefined
[2]  
Slonczewski J. C.(1996)undefined J. Magn. Magn. Mater. 159 L1-undefined
[3]  
Berger L.(1996)undefined Phys. Rev. B 54 9353-undefined
[4]  
Katine J. A.(2000)undefined Phys. Rev. Lett. 84 3149-undefined
[5]  
Albert F. J.(1999)undefined Europhys. Lett. 45 626-undefined
[6]  
Buhrman R. A.(1998)undefined Phys. Rev. Lett. 80 4281-undefined
[7]  
Myers E. B.(2002)undefined Phys. Rev. Lett. 88 137202-undefined
[8]  
Ralph D. C.(2004)undefined Phys. Rev. B 86 4122-undefined
[9]  
Wegrowe J.-E.(2004)undefined Jpn. J. Appl. Phys. 43 L825-undefined
[10]  
Kelly D.(2001)undefined Phys. Rev. Lett. 87 026602-undefined
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