Recent Progress in Mid- and Far-Infrared Semiconductor Detectors

被引：0
|
作者：
W. Z. Shen
机构：
[1] Shanghai Jiao Tong University,Department of Applied Physics
[2] Shanghai Institute of Technical Physics,National Laboratory for Infrared Physics
来源：
International Journal of Infrared and Millimeter Waves | 2000年 / 21卷
关键词：
progress; infrared; semiconductor detector;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The recent developments of semiconductor infrared detectors in extending the wavelength coverage and improving the focal plane array (FPA) performance are reviewed. The emphasis is on the GeSi/Si heterojunction infrared photoemission detectors (HIPs), GaAs/AlGaAs quantum well infrared photodetecots (QWIPs), Si, Ge and GaAs blocked impurity band detectors (BIBS), and Si and GaAs homojunction interfacial work-function internal photo-emission (HIWIP) far-infrared (FIR) detectors. The advantages, current status, and potential limitations of these infrared detectors have also been discussed.
引用
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页码：1739 / 1746
页数：7
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