Effect of gamma irradiation on photoconversion characteristics of metal/gallium arsenide barrier structures with textured interface

被引：0
|
作者：
N. L. Dmitruk
O. Yu. Borkovskaya
R. V. Konakova
I. B. Mamontova
S. V. Mamykin
D. I. Voitsikhovskiy
机构：
[1] National Academy of Sciences of Ukraine,Institute of Semiconductor Physics
来源：
Technical Physics | 2002年 / 47卷
关键词：
Radiation; GaAs; Solar Cell; Gamma Irradiation; Arsenide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of 60Co gamma irradiation at doses of 103-2×105 Gy on the photoconversion and dark I-V characteristics of Au/GaAs surface-barrier solar cells (SCs) is studied. The morphology of the interface microrelief is varied to reach the highest photoconversion efficiency. Of the two types of microrelief morphology (dendritic and quasi-grating) obtained by the chemical anisotropic etching of n-(100)GaAs, the latter is more promising, particularly for SCs designed for space application, since the associated SCs offer higher efficiency and radiation resistance.
引用
收藏
页码：698 / 702
页数：4
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