Effect of annealing on ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by the sol-gel method

被引：0
作者：
Guo D. [1 ]
Wang Y. [1 ]
Yu J. [1 ]
Gao J. [1 ]
机构：
[1] Department of Electronic Science and Technology, Huazhong University of Science and Technology
来源：
Journal of Wuhan University of Technology-Mater. Sci. Ed. | 2005年 / 20卷 / 4期
关键词：
Bi[!sub]3.25[!/sub]La[!sub]0.75[!/sub] Ti[!sub]3[!/sub]O[!sub]12[!/sub; Ferroelectric thin film; Leakage current; Sol-gel method;
D O I：
10.1007/BF02841273
中图分类号：
学科分类号：
摘要：
Bi3.25La0.75Ti3O12 (BLT) thin films were prepared on Pt/Ti/SiO2/Si substrate by the sol-gel method. The effect of annealing on their structures and ferroelectric properties was investigated. The XRD patterns indicate that the BLT films annealed at different temperatures are randomly orientated and the single perovskite phase is obtained at 550°C. The remnant polarization increases and the coercive field decreases with the annealing temperature increasing. The leakage current density of the BLT films annealed at 700°C is about 5.8 × 10-8 A/cm at the electric field of 250 kV/cm.
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页码：20 / 21
页数：1
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