Development and implementation of an angle detector using nanoporous silicon-based photovoltaic sensor

The present work deals with the design, development, and implementation of an angle detector using n-ATO/p-PSi photovoltaic sensor. Nanoporous structures have been developed over p-type porous silicon wafers by anodization technique under optimized conditions. Photoluminescence studies of porous silicon show emission between 700 and 702 nm for the constant excitation at 350 nm, which illustrates that the band gap can be tuned according to the HF:H2O:C2H5OH ratio. n-ATO/p-PSi O heterojunction photovoltaic sensor has been developed by cost-effective Spray pyrolysis method. I–V characteristics under dark and different illumination intensities have been investigated, and the results are discussed. The fabricated sensor is employed for sensitive angle detection of a light source. The sensor is attached to a DC motor, which rotates at 30 rpm. When the light is from the source incident on the light sensor, a dc voltage has been produced, which in turn is amplified, and the signal has been used to stop the motor. The motor is coupled to a rotary transducer, which is calibrated to read or display 0–3.60 V for 0–360°.