Effect of Temperature on the Growth Rate of Semiconductor Nanowires

[1] Bootsma G.A.(1971)A quantitative study on the growth of silicon whiskers from silane and germanium whiskers from germane J. Cryst. Growth 10 223-234

[2] Gassen H.J.(1978)Some notes of the growth kinetics and morphology of VLS Si crystals grown with Pt and Au as liquid-forming agents J. Cryst. Growth 43 235-244

[3] Weyher J.(2003)Growth characteristics of silicon nanowires synthesized by VLS growth in nanoporous Al templates J. Cryst. Growth 254 14-22

[4] Lew K.K.(2006)The role of surface diffusion of adatoms in the formation of nanowire crystals Semiconductors 40 1075-1082

[5] Redwing J.M.(2010)General theoretical model for the vapor-phase growth and growth rate of semiconductor nanowires J. Vac. Sci. Technol. B 28 329-352

[6] Dubrovskii V.G.(2013)Kinetics of Ge NW growth by the vapor–solid–solid mechanism with a Ni-based catalyst APL Mater. 1 061101-27

[7] Sibirev N.V.(1995)Si NW growth kinetics in a hot-wall reactor, Fiz. 38 22-1610

[8] Suric R.A.(2005)A new understanding of Au-assisted growth of III–V semiconductor nanowires Adv. Funct. Mater. 15 1603-4282

[9] Cirlin G.E.(2008)A systematic study on the growth of GaAs NWs by MOCV deposition Nano Lett. 8 4275-220

[10] Ustinov V.M.(2004)Growth of one-dimensional nanostructures in MOVPE J. Cryst. Growth 272 211-undefined

[1] Bootsma G.A.(1971)A quantitative study on the growth of silicon whiskers from silane and germanium whiskers from germane J. Cryst. Growth 10 223-234

[2] Gassen H.J.(1978)Some notes of the growth kinetics and morphology of VLS Si crystals grown with Pt and Au as liquid-forming agents J. Cryst. Growth 43 235-244

[3] Weyher J.(2003)Growth characteristics of silicon nanowires synthesized by VLS growth in nanoporous Al templates J. Cryst. Growth 254 14-22

[4] Lew K.K.(2006)The role of surface diffusion of adatoms in the formation of nanowire crystals Semiconductors 40 1075-1082

[5] Redwing J.M.(2010)General theoretical model for the vapor-phase growth and growth rate of semiconductor nanowires J. Vac. Sci. Technol. B 28 329-352

[6] Dubrovskii V.G.(2013)Kinetics of Ge NW growth by the vapor–solid–solid mechanism with a Ni-based catalyst APL Mater. 1 061101-27

[7] Sibirev N.V.(1995)Si NW growth kinetics in a hot-wall reactor, Fiz. 38 22-1610

[8] Suric R.A.(2005)A new understanding of Au-assisted growth of III–V semiconductor nanowires Adv. Funct. Mater. 15 1603-4282

[9] Cirlin G.E.(2008)A systematic study on the growth of GaAs NWs by MOCV deposition Nano Lett. 8 4275-220

[10] Ustinov V.M.(2004)Growth of one-dimensional nanostructures in MOVPE J. Cryst. Growth 272 211-undefined