Ge/Si photodiodes with embedded arrays of Ge quantum dots forthe near infrared (1.3–1.5 µm) region

被引：0
|
作者：
A. I. Yakimov
A. V. Dvurechenskii
A. I. Nikiforov
S. V. Chaikovskii
S. A. Tiis
机构：
[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Division
来源：
Semiconductors | 2003年 / 37卷
关键词：
Spectral Range; Magnetic Material; Electromagnetism; Quantum Efficiency; Dark Current;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A method has been devised for MBE fabrication of p-i-n photodiodes for the spectral range of 1.3–1.5 µm, based on multilayer Ge/Si heterostructures with Ge quantum dots (QDs) on a Si substrate. The sheet density of QDs is 1.2×1012 cm−2, and their lateral size is ∼8 nm. The lowest room-temperature dark current reported hitherto for Ge/Si photodetectors is achieved (2×10−5 A/cm2 at 1 V reverse bias). A quantum efficiency of 3% at 1.3 µm wavelength is obtained.
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页码：1345 / 1349
页数：4
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