Electron Transport in Cryocrystals

被引:0
作者
V. G. Storchak
D. G. Eshchenko
J. H. Brewer
S. P. Cottrell
S. F. J. Cox
E. Karlsson
R. W. Wappling
机构
[1] Russian Science Centre “Kurchatov Institute”,Canadian Institute for Advanced Research and Department of Physics
[2] Institute for Nuclear Research,Department of Physics
[3] University of British Columbia,undefined
[4] Rutherford Appleton Laboratory,undefined
[5] Chilton,undefined
[6] Uppsala University,undefined
来源
Journal of Low Temperature Physics | 2001年 / 122卷
关键词
Electron Transport; Spin Relaxation; Relaxation Technique; Excess Electron; Recent Experimental Study;
D O I
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中图分类号
学科分类号
摘要
We review our recent experimental studies of the excess electron transport in cryocrystals and cryoliquids. We use a muon spin relaxation technique to explore the phenomenon of delayed muonium formation: excess electrons liberated in the μ+ ionization track converge upon the positive muons and form Mu (μ+e−) atoms in which the μ+ polarization is partially lost. The spatial distribution of such electrons with respect to the moon is shown to be highly anisotropic: the μ+ thermalizes well “downstream” from the center of the electron distribution. Measurements in electric fields up to 30 kV/cm allow one to estimate the characteristic muon-electron distance in different insulators: the results range from 10−6 cm to 10−4 cm. This circumstance makes the basis of a recently developed new technique for electron transport studies on microscopic scale: electron mobility can be extracted when both the characteristic muon-electron distance and characteristic time for muonium atom formation are determined. The microscopic length scale enables the electron to sometimes spend its entire free lifetime in a state which may not be detected by conventional macroscopic techniques. The muonium formation process in condensed matter is shown to depend critically upon whether the excess electron forms a polaron or remains in a delocalized state. Different mechanisms of electron transport in insulators are discussed.
引用
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页码:527 / 535
页数:8
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