Nanotribological Behavior of Ultra-thin Al2O3 Films Prepared by Atomic Layer Deposition

被引：1
|
作者：
Zhimin Chai
Yuhong Liu
Xinchun Lu
Dannong He
机构：
[1] Tsinghua University,The State Key Laboratory of Tribology
[2] National Engineering Research Center for Nanotechnology,undefined
来源：
Tribology Letters | 2014年 / 55卷
关键词：
Nanotribology; Al; O; Ultra-thin; Atomic layer deposition; Atomic force microscope;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Si-based nano/micro-electromechanical system (NEMS/MEMS) devices with contacting and rubbing structures cannot run reliably due to their poor tribological performance. A thin alumina (Al2O3) film is a promising candidate for the protective coating in the applications of NEMS/MEMS devices. In this study, nanotribological behavior of ultra-thin Al2O3 films prepared by atomic layer deposition on a Si (100) substrate was investigated in comparison with that of Si (100). X-ray photoelectron spectroscopy was used to determine the composition of Al2O3 films. Atomic force microscopy with different tips was employed to measure the scratch resistance, adhesion and friction forces of various samples. The results show that Al2O3 films have larger scratch resistance than that of Si (100). In addition, the adhesion and friction forces of Al2O3 films are smaller than that of Si (100). Thus, the Al2O3 films are capable of a wide application in Si-based NEMS/MEMS devices. The improved tribological performance of Al2O3 films is attributed to their hydrophobic properties.
引用
收藏
页码：143 / 149
页数：6
相关论文
共 50 条
  • [41] Reducing the adhesion and friction forces of Si by coating ultra-thin Al2O3 films
    Chai, Zhimin
    Liu, Yuhong
    Lu, Xinchun
    He, Dannong
    RSC ADVANCES, 2014, 4 (92) : 51047 - 51054
  • [42] Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
    Riyanto Edy
    Xiaojiang Huang
    Ying Guo
    Jing Zhang
    Jianjun Shi
    Nanoscale Research Letters, 8
  • [43] Ultra-thin planar tunnel junctions grown on Nb thin films by atomic layer deposition
    Zhao, Han
    Mehio, Omar
    Park, Wan Kyu
    Greene, Laura H.
    THIN SOLID FILMS, 2016, 612 : 317 - 321
  • [44] Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates
    Groner, MD
    Elam, JW
    Fabreguette, FH
    George, SM
    THIN SOLID FILMS, 2002, 413 (1-2) : 186 - 197
  • [45] Charge-Trapping Characteristics of Al2O3/Cu/Al2O3 Nanolaminate Structures Prepared Through Atomic Layer Deposition
    Lee, Byung Kook
    Kim, Seok Hwan
    Park, Bo Keun
    Lee, Sun Sook
    Hwang, Jin-Ha
    Chung, Taek-Mo
    Lee, Young Kuk
    Kim, Chang Gyoun
    An, Ki-Seok
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (07) : 5887 - 5891
  • [46] X-ray spectral analysis of the interface of a thin Al2O3 film prepared on silicon by atomic layer deposition
    A. S. Shulakov
    A. P. Braiko
    S. V. Bukin
    V. E. Drozd
    Physics of the Solid State, 2004, 46 : 1145 - 1148
  • [47] Structure of Al2O3 thin layers synthesized on the silicon surface by atomic layer deposition
    S. V. Bukin
    A. S. Shulakov
    Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2007, 1 : 67 - 70
  • [48] XPS characterization of Al2O3/ZnO ultrathin films grown by atomic layer deposition
    Ghods, Amirhossein
    Zhou, Chuanle
    Ferguson, Ian T.
    SURFACE SCIENCE SPECTRA, 2020, 27 (02):
  • [49] Nucleation and growth during the atomic layer deposition of W on Al2O3 and Al2O3 on W
    Grubbs, RK
    Nelson, CE
    Steinmetz, NJ
    George, SM
    THIN SOLID FILMS, 2004, 467 (1-2) : 16 - 27
  • [50] The interaction of cobalt species with alumina on Co/Al2O3 catalysts prepared by atomic layer deposition
    Backman, L. B.
    Rautiainen, A.
    Lindblad, M.
    Krause, A. O. I.
    APPLIED CATALYSIS A-GENERAL, 2009, 360 (02) : 183 - 191
12345