Strategic processes in false recognition memory

被引:0
作者
Evan Heit
Noellie Brockdorff
Koen Lamberts
机构
[1] University of Warwick,Department of Psychology
来源
Psychonomic Bulletin & Review | 2004年 / 11卷
关键词
Response Signal; False Memory; Study List; False Recognition; Test List;
D O I
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学科分类号
摘要
In two experiments, the response signal technique (Reed, 1973) was combined with the DRM paradigm (e.g., McDermott & Roediger, 1998) to investigate the time course of false recognition memory— in particular, how this effect varies along the time course of generating a recognition judgment. Across the experiments, in addition to standard instructions, there were forewarning instructions encouraging the participants to avoid this effect, as well as inclusion instructions intended to enhance this tendency. It was found that the false memory effect was at its strongest at earlier response signals, diminishing when more time was given to make a recognition judgment. The forewarning instructions led to a more conservative overall response bias, rather than to a reduction of the effect. However, the participants were able to exaggerate this effect in the inclusion condition. The results are discussed in terms of the role of strategic processing in recognition memory. Part of this research was presented at the 42nd Annual Meeting of the Psychonomic Society, Orlando, in November 2001. It was supported by a grant from the Biotechnology and Biological Sciences Research Council of the United Kingdom.
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页码:380 / 386
页数:6
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