Formation of Hexagonal Phase 9R-Si in SiO\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${}_{\mathbf{2}}$$\end{document}/Si System upon Kr\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${}^{\mathbf{+}}$$\end{document} Ion Implantation

被引：0
作者：
A. A. Nikolskaya
D. S. Korolev
A. N. Mikhaylov
A. A. Konakov
A. I. Okhapkin
S. A. Kraev
A. I. Andrianov
A. D. Moiseev
A. A. Sushkov
D. A. Pavlov
D. I. Tetelbaum
机构：
[1] Research Institute of Physics and Technology,
[2] Lobachevsky State University of Nizhny Novgorod,undefined
[3] Institute for Physics of Microstructures,undefined
[4] Russian Academy of Sciences,undefined
[5] GSP-105,undefined
来源：
Moscow University Physics Bulletin | 2023年 / 78卷 / 3期
关键词：
silicon; SiO; /Si structure; ion implantation; hexagonal silicon polytypes; 9R-Si phase; photoluminescence;
D O I：
10.3103/S0027134923030153
中图分类号：
学科分类号：
摘要：
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页码：361 / 367
页数：6
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