Lateral resolution in focused electron beam-induced deposition: scaling laws for pulsed and static exposure

被引：0
|
作者：
Aleksandra Szkudlarek
Wojciech Szmyt
Czesław Kapusta
Ivo Utke
机构：
[1] Empa,Laboratory for Mechanics of Materials and Nanostructures
[2] AGH University of Science and Technology,Department of Solid State Physics, Faculty of Physics and Applied Computer Science
来源：
Applied Physics A | 2014年 / 117卷
关键词：
Dwell Time; Surface Diffusion; Lateral Resolution; Irradiate Area; Adsorbate Concentration;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this work, we review the single-adsorbate time-dependent continuum model for focused electron beam-induced deposition (FEBID). The differential equation for the adsorption rate will be expressed by dimensionless parameters describing the contributions of adsorption, desorption, dissociation, and the surface diffusion of the precursor adsorbates. The contributions are individually presented in order to elucidate their influence during variations in the electron beam exposure time. The findings are condensed into three new scaling laws for pulsed exposure FEBID (or FEB-induced etching) relating the lateral resolution of deposits or etch pits to surface diffusion and electron beam exposure dwell time for a given adsorbate depletion state.
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页码：1715 / 1726
页数：11
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