Radiation γ annealing of silicon carbide irradiated in a bor-60 reactor

The results of irradiating at 400–800°C silicon carbide, having the β-SiC cubic modification, in different channels of the BOR-60 reactor, where the radiation composition factor was varied over the range 2.3–6.5, are discussed. The expansion of the crystal lattice of β-SiC in the saturation stage is taken as the measure of damage. Data on isochronous annealing are used to investigate the energy spectrum for activation of annealing of defects - the smearing at high and low energy under the influence of γ radiation. The results are compared with data from similar irradiation of silicon carbide in MR and BR-10 and with data on the influence of γ radiation on other materials and their properties.