Design, simulation and analysis of RF MEMS capacitive shunt switches with high isolation and low pull-in-voltage

This paper presents the design a capacitive shunt type RF-MEMS switch with high isolation, high switching speed and low actuation voltage for Ka-band applications. The proposed RF-MEMS switch has chosen different structures to reduce the actuation voltage. This paper investigates various analysis such as Electromechanical and RF characteristics of the proposed switch. The beam material taken as the gold and the dielectric is taken as Si3N4 with ℰr as 7.5 and the pull-in voltage of proposed switch obtained as 3.37 V. The proposed different RF-MEMS switches have been analyzed over the range of 26.5–40 GHz frequency. The clamped-clamped structure type RF MEMS Switch is having high isolation as − 46.37 dB at 40 GHz. The perfection of RF losses makes these switches as a good choice for a high frequency of K-band.