Design, simulation and analysis of RF MEMS capacitive shunt switches with high isolation and low pull-in-voltage

被引：0
|
作者：
K. Girija Sravani
D. Prathyusha
Ch. Gopichand
Surya Manoj Maturi
Ameen Elsinawi
Koushik Guha
K. Srinivasa Rao
机构：
[1] Koneru Lakshmaiah Education Foundation (Deemed To Be University),Department of Electronics and Communication Engineering
[2] National Institute of Technology,National MEMS Designing Center, Department of Electronics and Communication Engineering
[3] American University of Iraq,Mechanical Engineering
来源：
Microsystem Technologies | 2022年 / 28卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
This paper presents the design a capacitive shunt type RF-MEMS switch with high isolation, high switching speed and low actuation voltage for Ka-band applications. The proposed RF-MEMS switch has chosen different structures to reduce the actuation voltage. This paper investigates various analysis such as Electromechanical and RF characteristics of the proposed switch. The beam material taken as the gold and the dielectric is taken as Si3N4 with ℰr as 7.5 and the pull-in voltage of proposed switch obtained as 3.37 V. The proposed different RF-MEMS switches have been analyzed over the range of 26.5–40 GHz frequency. The clamped-clamped structure type RF MEMS Switch is having high isolation as − 46.37 dB at 40 GHz. The perfection of RF losses makes these switches as a good choice for a high frequency of K-band.
引用
收藏
页码：913 / 928
页数：15
相关论文
共 50 条
  • [1] Design, simulation and analysis of RF MEMS capacitive shunt switches with high isolation and low pull-in-voltage
    Sravani, K. Girija
    Prathyusha, D.
    Gopichand, Ch.
    Maturi, Surya Manoj
    Elsinawi, Ameen
    Guha, Koushik
    Rao, K. Srinivasa
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2022, 28 (04): : 913 - 928
  • [2] Pull-in-voltage and RF analysis of MEMS based high performance capacitive shunt switch
    Pertin, Osor
    Kurmendra
    MICROELECTRONICS JOURNAL, 2018, 77 : 5 - 15
  • [3] Design and Analysis of a Serpentine Type RF MEMS Shunt Switch with Low Pull-in-Voltage
    K. Girija Sravani
    Ch. Gopichand
    K. Srinivasa Rao
    Transactions on Electrical and Electronic Materials, 2022, 23 : 388 - 395
  • [4] Design and Analysis of a Serpentine Type RF MEMS Shunt Switch with Low Pull-in-Voltage
    Sravani, K. Girija
    Gopichand, Ch.
    Rao, K. Srinivasa
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2022, 23 (04) : 388 - 395
  • [5] Low Voltage Rf Mems Capacitive Shunt Switches
    Kaur, Rajneet
    Tripathi, C. C.
    Kumar, Dinesh
    WIRELESS PERSONAL COMMUNICATIONS, 2014, 78 (02) : 1391 - 1401
  • [6] Low Voltage Rf Mems Capacitive Shunt Switches
    Rajneet Kaur
    C. C. Tripathi
    Dinesh Kumar
    Wireless Personal Communications, 2014, 78 : 1391 - 1401
  • [7] Design and simulation of a novel RF MEMS shunt capacitive switch with low actuation voltage and high isolation
    Somayye Molaei
    Bahram Azizollah Ganji
    Microsystem Technologies, 2017, 23 : 1907 - 1912
  • [8] Design and simulation of a novel RF MEMS shunt capacitive switch with low actuation voltage and high isolation
    Molaei, Somayye
    Ganji, Bahram Azizollah
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2017, 23 (06): : 1907 - 1912
  • [9] Design, Fabrication and Characterization of Capacitive RF MEMS Switches with Low Pull-In Voltage
    Shekhar, S.
    Vinoy, K. J.
    Ananthasuresh, G. K.
    2014 IEEE INTERNATIONAL MICROWAVE AND RF CONFERENCE (IMARC), 2014, : 182 - 185
  • [10] Modeling and Analysis of Low Voltage, High Isolation Capacitive type RF-MEMS Switches
    Sawant, Vishram B.
    Madhewar, Mukesh
    Anjum, Aakif
    Mohite, Suhas S.
    2018 9TH INTERNATIONAL CONFERENCE ON COMPUTING, COMMUNICATION AND NETWORKING TECHNOLOGIES (ICCCNT), 2018,
12345