Modeling of curvature in multilayered epitaxially grown films

被引：0
作者：
Vanamu G. [1 ,2 ]
Robbins J. [3 ]
Khraishi T.A. [4 ]
Datye A. [1 ]
机构：
[1] Department of Chemical and Nuclear Engineering, University of New Mexico, Albuquerque
[2] Intel Corp., Santa Clara, CA
[3] Sandia National Laboratories, Albuquerque
[4] Mechanical Engineering Department, University of New Mexico, Albuquerque
来源：
International Journal of Mechanics and Materials in Design | 2006年 / 3卷 / 3期
关键词：
Eigenstrains; Heteroepitaxy; Residual stresses; Thin films;
D O I：
10.1007/s10999-007-9029-z
中图分类号：
学科分类号：
摘要：
A model was developed to calculate the radius of curvature produced by stresses in lattice-mismatched multilayers grown epitaxially on a planar substrate. The analysis was done for any number (N) of layers using beam bending theory and strain partitioning theory introduced by our group earlier. This model is reduced to a limiting case of a two-layer structure (film-substrate). The variation of the radius of curvature with the relative thicknesses and other material properties of the layers was determined and compared to finite element calculations. The analytical model was further verified by applying it to a symmetric tri-laminate structure. © 2007 Springer Science+Business Media B.V.
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页码：265 / 275
页数：10
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