Ferromagnetism in laser-deposited GaMnAs layers

被引：2
作者：
O. V. Vikhrova
Yu. A. Danilov
E. S. Demidov
B. N. Zvonkov
V. I. Kovalev
Z. E. Kun’kova
V. V. Podol’skii
M. V. Sapozhnikov
A. I. Suchkov
M. P. Temiryazeva
机构：
[1] Nizhni Novgorod State University,Physicotechnical Research Institute
[2] Russian Academy of Sciences,Institute for Physics of Microstructures
[3] Nizhni Novgorod State University,Institute of Radio Engineering and Electronics (Fryazino Branch)
[4] Russian Academy of Sciences,Institute of High
[5] Russian Academy of Sciences,Purity Substances
来源：
Bulletin of the Russian Academy of Sciences: Physics | 2007年 / 71卷 / 1期
关键词：
GaAs; Sample Plane; Metal Organic Vapor Phase Epitaxy; Curie Tempera; Electron Spin Reso;
D O I：
10.3103/S106287380701008X
中图分类号：
学科分类号：
摘要：
The properties of the GaMnAs layers grown by laser deposition on semi-insulating GaAs(100) substrates at temperatures from 300 to 650°C have been investigated. A strong anisotropy of the hysteretic curve of the angle of rotation of the plane of polarization with a change in the magnetic field direction in the sample plane was found during investigation of the magneto-optical Kerr effect (300 K). The domain structure in GaMnAs layers has been observed for the first time at room temperature by magnetic-force microscopy.
引用
收藏
页码：32 / 34
页数：2
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