Ferromagnetism in laser-deposited GaMnAs layers

被引：2
|
作者：
O. V. Vikhrova
Yu. A. Danilov
E. S. Demidov
B. N. Zvonkov
V. I. Kovalev
Z. E. Kun’kova
V. V. Podol’skii
M. V. Sapozhnikov
A. I. Suchkov
M. P. Temiryazeva
机构：
[1] Nizhni Novgorod State University,Physicotechnical Research Institute
[2] Russian Academy of Sciences,Institute for Physics of Microstructures
[3] Nizhni Novgorod State University,Institute of Radio Engineering and Electronics (Fryazino Branch)
[4] Russian Academy of Sciences,Institute of High
[5] Russian Academy of Sciences,Purity Substances
来源：
Bulletin of the Russian Academy of Sciences: Physics | 2007年 / 71卷 / 1期
关键词：
GaAs; Sample Plane; Metal Organic Vapor Phase Epitaxy; Curie Tempera; Electron Spin Reso;
D O I：
10.3103/S106287380701008X
中图分类号：
学科分类号：
摘要：
The properties of the GaMnAs layers grown by laser deposition on semi-insulating GaAs(100) substrates at temperatures from 300 to 650°C have been investigated. A strong anisotropy of the hysteretic curve of the angle of rotation of the plane of polarization with a change in the magnetic field direction in the sample plane was found during investigation of the magneto-optical Kerr effect (300 K). The domain structure in GaMnAs layers has been observed for the first time at room temperature by magnetic-force microscopy.
引用
收藏
页码：32 / 34
页数：2
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