Morphological characteristics of grain boundaries in multicrystalline silicon

被引：0
|
作者：
S. M. Pescherova
A. I. Nepomnyaschih
L. A. Pavlova
I. A. Eliseev
R. V. Presnyakov
机构：
[1] Russian Academy of Sciences,Vinogradov Institute of Geochemistry
[2] Siberian Branch,undefined
来源：
Semiconductors | 2014年 / 48卷
关键词：
Atomic Force Microscopy Image; Twin Boundary; Subgrain Boundary; Backscatter Electron Image; Special Boundary;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The structure of multicrystalline silicon and the distribution of the nonequlibrium charge-carrier lifetime over the surface and in the bulk of samples are investigated. Regular dependences of the electrical characteristics on the structure of grains and grain boundaries are established. Grain boundaries in multisilicon grown by the Bridgman-Stockbarger technique from a melt of metallurgical grade silicon are investigated. Metallographic and microscopic descriptions of grain boundaries can be used in fitting the crystallization conditions for growing multisilicon with the perfect structure for solar-power engineering.
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页码：476 / 480
页数：4
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