Adaptively-biased MOSFET for low voltage CMOS analog circuits

被引:0
作者
Hiroki Sato
Shigetaka Takagi
机构
[1] Tokyo Institute of Technology,Department of Communications and Integrated Systems, Graduate School of Science and Engineering
来源
Analog Integrated Circuits and Signal Processing | 2012年 / 72卷
关键词
MOSFET; Triode region; Saturation region; Adaptively biasing; CMOS analog circuit; Low voltage;
D O I
暂无
中图分类号
学科分类号
摘要
This paper proposes technique for mitigating an issue of “reduced signal voltage range” in existing analog signal processing circuits in finer technologies due to their low supply voltage. The proposed adaptively-biased MOSFET pair can make an MOSFET operate in the saturation or the triode region in a wider voltage range. The simulated results of a source-coupled pair with the proposed structure by using Cadence Spectre and MOSFET parameter of a 0.18  μm CMOS technology are also presented.
引用
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页码:557 / 563
页数:6
相关论文
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Dennard R. H.(1974)Design of ion-implanted MOSFETs with very small physical dimensions IEEE Journal of Solid-State Circuits, SC -9 256-268
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