Low-Dimensional Waveguide Grating Fabrication in GaN with Use of SiCl4/Cl2/Ar-Based Inductively Coupled Plasma Dry Etching

被引:0
作者
R. Dylewicz
S. Patela
R. A. Hogg
P. W. Fry
P. J. Parbrook
R. Airey
A. Tahraoui
机构
[1] Wroclaw University of Technology,Photonics Group, Faculty of Microsystem Electronics and Photonics
[2] University of Glasgow,Optoelectronics Research Group, Department of Electronics & Electrical Engineering
[3] University of Sheffield,Department of Electronic and Electrical Engineering, EPSRC National Center for III
来源
Journal of Electronic Materials | 2009年 / 38卷
关键词
Gallium nitride; dry etching; inductively coupled plasma; periodic structure; grating coupler;
D O I
暂无
中图分类号
学科分类号
摘要
Optimized fabrication of submicron-sized features in gallium nitride (GaN) with the use of inductively coupled plasma (ICP) dry etching, based on SiCl4/Cl2/Ar gas mixture, is presented. Dense periodic patterns, i.e., 400-nm-period gratings, were transferred into a gallium nitride waveguide under different etching conditions. ICP power, radiofrequency (RF) power, chamber pressure, and Ar/Cl2 gas mixing ratio were altered during the experiment. Depths of fabricated grating couplers up to 670 nm were achieved. The most suitable etching conditions are discussed with the assessment based on etching selectivity, scanning electron microscopy (SEM) observation of grating tooth slope, hard-mask erosion process, and etched surface morphology.
引用
收藏
页码:635 / 639
页数:4
相关论文
共 62 条
[1]  
Vörös J.(2002)undefined Biomaterials 23 3699-undefined
[2]  
Ramsden J.J.(1996)undefined Appl. Phys. Lett. 68 2105-undefined
[3]  
Csúcs G.(1999)undefined Mater. Sci. Eng. B 59 386-undefined
[4]  
Szendr I.(2001)undefined Appl. Phys. Lett. 78 563-undefined
[5]  
De Paul S.M.(2005)undefined Appl. Phys. Lett. 87 203508-undefined
[6]  
Textor M.(1998)undefined IEEE J. Sel. Top. Quant. Electron. 4 557-undefined
[7]  
Spencer N.D.(2000)undefined J. Vac. Sci. Technol. B 18 1409-undefined
[8]  
Nakamura S.(2003)undefined J. Vac. Sci. Technol. B 21 1268-undefined
[9]  
Senoh M.(2004)undefined J. Vac. Sci. Technol. A 22 2336-undefined
[10]  
Nagahama S.(undefined)undefined undefined undefined undefined-undefined