Thermoelectric figure of merit of a p-n junction

被引：0
作者：
Yu. I. Ravich
D. A. Pshenai-Severin
机构：
[1] St. Petersburg State Technical University,
来源：
Semiconductors | 2001年 / 35卷
关键词：
Thermal Conductivity; Magnetic Material; Electromagnetism; Bi2Te3; Thermoelectric Material;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The thermoelectric figure of merit of a semiconductor p-n junction is calculated in terms of the diode theory taking account of the bipolar thermal conductivity. The thermoelectric figure of merit of a Bi2Te3 diode is estimated and it is shown that the Ioffe criterion may be at the same level as the best modern thermoelectric materials but cannot exceed unity.
引用
收藏
页码：1161 / 1165
页数：4
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