Thermoelectric figure of merit of a p-n junction

被引：0
|
作者：
Yu. I. Ravich
D. A. Pshenai-Severin
机构：
[1] St. Petersburg State Technical University,
来源：
Semiconductors | 2001年 / 35卷
关键词：
Thermal Conductivity; Magnetic Material; Electromagnetism; Bi2Te3; Thermoelectric Material;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The thermoelectric figure of merit of a semiconductor p-n junction is calculated in terms of the diode theory taking account of the bipolar thermal conductivity. The thermoelectric figure of merit of a Bi2Te3 diode is estimated and it is shown that the Ioffe criterion may be at the same level as the best modern thermoelectric materials but cannot exceed unity.
引用
收藏
页码：1161 / 1165
页数：4
相关论文
共 50 条
  • [1] Thermoelectric figure of merit of a p-n junction
    Ravich, YI
    Pshenai-Severin, DA
    SEMICONDUCTORS, 2001, 35 (10) : 1161 - 1165
  • [2] The thermoelectric power on p-n junction
    Dashevsky, ZM
    Ashmontas, S
    Vingelis, L
    Gradauskas, I
    Kasian, AI
    PROCEEDINGS ICT '96 - FIFTEENTH INTERNATIONAL CONFERENCE ON THERMOELECTRICS, 1996, : 336 - 342
  • [3] Optimal thermoelectric figure of merit of a molecular junction
    Murphy, Padraig
    Mukerjee, Subroto
    Moore, Joel
    PHYSICAL REVIEW B, 2008, 78 (16):
  • [4] Printed Lateral p-n Junction for Thermoelectric Generation
    Mallick, Md Mofasser
    Franke, Leonard
    Hussein, Mohamed
    Roesch, Andres Georg
    Long, Zhongmin
    Eggeler, Yolita Maria
    Lemmer, Uli
    SMALL SCIENCE, 2024, 4 (11):
  • [5] Boundary Conditions for Thermoelectric Cooling in p-n Junction
    Lashkevych, Igor
    Gurevich, Yury G.
    INTERNATIONAL JOURNAL OF THERMOPHYSICS, 2011, 32 (05) : 1086 - 1097
  • [6] A van der Waals p-n heterostructure of GaSe/SnS2: a high thermoelectric figure of merit and strong anisotropy
    Xu, Zhiyuan
    Xia, Qiong
    Zhang, Long
    Gao, Guoying
    NANOSCALE, 2024, 16 (05) : 2513 - 2521
  • [7] THERMOELECTRIC FIGURE OF MERIT OF N-TYPE PBTE
    EFIMOVA, BA
    KOLOMOET.LA
    RAVICH, YI
    STAVITSK.TS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (10): : 1653 - &
  • [8] High Performance of p-n Junction Thermoelectric Device for Wearable Application
    Sathiyamoorthy, Suhasini
    Kumar, R.
    Neppolian, Bernaurdshaw
    Dhanalakshmi, Samiappan
    Veluswamy, Pandiyarasan
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, 10 (08)
  • [9] On the figure of merit of thermoelectric generators
    Chen, M
    Lu, SS
    Liao, B
    JOURNAL OF ENERGY RESOURCES TECHNOLOGY-TRANSACTIONS OF THE ASME, 2005, 127 (01): : 37 - 41
  • [10] THERMOELECTRIC FIGURE OF MERIT OF SUPERLATTICES
    SOFO, JO
    MAHAN, GD
    APPLIED PHYSICS LETTERS, 1994, 65 (21) : 2690 - 2692
12345