Numerical Investigation on the Effects of InSb Geometry on the InGaSb Crystal Growth Under Microgravity

被引：0
作者：
Xin Jin
Sheng Xu
Bing Wang
Zhanjun Chen
机构：
[1] Tsinghua University,School of Aerospace Engineering
来源：
Microgravity Science and Technology | / 35卷
关键词：
Crystal growth; Numerical simulation; Microgravity; InGaSb; Heat and Mass transfer;
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摘要：
InxGa1−xSb single crystals have been grown by using a GaSb/InSb/GaSb-sandwich system onboard at the International Space Station (ISS) via vertical gradient freezing method (VGF). In order to investigate the effects of InSb geometry on the InGaSb crystal growth under microgravity and further optimize the future space experiment, two-dimensional axisymmetric numerical simulations were carried out with different thicknesses and diameters of the InSb crystals. Simulation results showed that enough solutes from feed through diffusion is necessary for the crystal growth process and the InSb thickness will affect the axial Ga concentration gradient and therefore affect the crystal growth rates under microgravity. In addition, results also showed that a larger diameter for the InSb crystal will increase the volume crystal growth rates with a flatter shape for the grown crystal interfaces. In summary, simulation suggests a 2 mm or 3 mm thickness and a 12 mm diameter as the geometry of InSb for future space experiments.
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  • [1] Abe K(2014)Inatomi, Numerical simulations of SiGe crystal growth by the travelling liquidus-zone method in a microgravity environment J. Cryst. Growth 402 71-77
  • [2] Sumioka S(2018)Study of SiGe crystal growth Interface processed in microgravity Cryst. Growth Des. 18 3697-3703
  • [3] Sugioka K-I(2001)Comparison of field effect characteristics between space grown and earth-grown gallium arsenide single crystal substrates Appl. Phys. Lett. 78 478-479
  • [4] Kubo M(1998)Bridgman solidification of GaSb in space J. Cryst. Growth. 192 63-72
  • [5] Tsukada T(2000)Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions J. Cryst. Growth. 213 40-50
  • [6] Kinoshita K(2015)Growth of InxGa1-xSb alloy semiconductor at the international space station (ISS) and comparison with terrestrial experiments NPJ Microgravity. 1 15011-760
  • [7] Arai Y(2018)Continuous solidification of immiscible alloys and microstructure control Microgravity Sci. Tech. 30 747-589
  • [8] Inatomi Y(2002)Viscosity of Molten GaSb and InSb Int. J. Thermophysics 23 235-51
  • [9] Arai Y(2018)Latest results on complex plasmas with the PK-3 plus laboratory on board the international Space Station Microgravity Sci. Tech. 30 581-677
  • [10] Kinoshita K(2003)Comparison between numerical simulation and experimental measurement of solute segregation during directional solidification J. Cryst. Growth 255 40-154
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