Ultrasound effect on the Czochralski growth of corundum crystals

被引:0
|
作者
S. D. Vyshnevskiy
E. V. Kryvonosov
L. A. Lytvynov
机构
[1] National Academy of Sciences of Ukraine,Institute of Single Crystals
来源
Inorganic Materials | 2009年 / 45卷
关键词
Bubble Size; Acoustic Vibration; Sapphire Crystal; Corundum Crystal; Czochralski Growth;
D O I
暂无
中图分类号
学科分类号
摘要
We have studied the effect of ultrasound in the range 100–400 kHz on the Czochralski growth of corundum single crystals in a carbon-containing medium. The results demonstrate that sonication during crystal growth influences the size and density of gas bubbles in the melt. At frequencies above 350 kHz, sonication contributes to the bubble rejection at the growth front, thereby reducing the pore density in the crystal.
引用
收藏
页码:1009 / 1012
页数:3
相关论文
共 50 条
  • [21] Novel Way to Assess the Validity of Czochralski Growth Simulations
    Veirman, Jordi
    Letty, Elenore
    Favre, Wilfried
    Albaric, Mickael
    Pelletier, David
    Lemiti, Mustapha
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019, 216 (17):
  • [22] New developments in silicon Czochralski crystal growth and wafer technology
    Mozer, AP
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 73 (1-3): : 36 - 41
  • [23] Segregation during the seeding process in the Czochralski growth of GeSi alloys
    Yonenaga, I
    Murakami, Y
    JOURNAL OF CRYSTAL GROWTH, 1998, 191 (03) : 399 - 404
  • [24] Czochralski growth of doped germanium with an applied rotating magnetic field
    Dold, P
    CRYSTAL RESEARCH AND TECHNOLOGY, 2003, 38 (7-8) : 659 - 668
  • [25] Investigation of nitrogen behaviors during Czochralski silicon crystal growth
    Yu, Xuegong
    Yang, Deren
    Hoshikawa, Keigo
    JOURNAL OF CRYSTAL GROWTH, 2011, 318 (01) : 178 - 182
  • [26] A model for oxygen precipitation in Czochralski silicon during crystal growth
    Kobayashi, S
    JOURNAL OF CRYSTAL GROWTH, 1997, 174 (1-4) : 163 - 169
  • [27] Czochralski growth and scintillation properties of Li6LuxY1-x(BO3)3:Ce3+ single crystals
    Fawad, U.
    Kim, H. J.
    Park, H.
    Kim, Sunghwan
    Khan, Sajid
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2016, 806 : 117 - 122
  • [28] Low thermal gradient Czochralski growth of large MWO4 (M = Zn, Cd) crystals, and microstructural and electronic properties of the (010) cleaved surfaces
    Atuchin, V. V.
    Bekenev, V. L.
    Borovlev, Yu. A.
    Galashov, E. N.
    Khyzhun, O. Y.
    Kozhukhov, A. S.
    Pokrovsky, L. D.
    Zhdankov, V. N.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2017, 19 (1-2): : 86 - 90
  • [29] Czochralski growth of Yb doped oxyapatite for high power laser application
    Yoshikawa, A
    Fujiwara, C
    Sato, H
    Nishi, T
    Ohta, H
    Fukuda, T
    Waseda, Y
    Boulon, G
    Ito, M
    Guyot, Y
    Lebbou, K
    OPTICAL MATERIALS, 2004, 26 (04) : 385 - 390
  • [30] Flow transitions in melts during Czochralski growth of GaAs single crystal
    Chen Shu-Xian
    Li Ming-Wei
    JOURNAL OF INORGANIC MATERIALS, 2007, 22 (01) : 15 - 20