Increase in quantum efficiency of IR emission in elastically strained narrow-gap semiconductors

被引：0

作者：

S. G. Gasan-zade

M. V. Strikha

S. V. Staryi

G. A. Shepel’skii

V. A. Boiko

机构：

[1] National Academy of Sciences of Ukraine,Institute of Semiconductor Physics

来源：

Semiconductors | 2002年 / 36卷

关键词：

Experimental Data; Recombination; Auger; Magnetic Material; Valence Band;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The rate of radiative band-to-band recombination in elastically strained direct-band narrow-gap semiconductors increases owing to the valence band transformation. At the same time, the rate of nonradiative band-to-band transitions (Auger recombination) decreases dramatically. As a result, the quantum efficiency of IR emission in the range of band-to-band transitions can be essentially raised and, as calculation shows, tends to limiting values close to unity. Experimental data were obtained for InSb crystals under strong excitation.

引用

页码：404 / 409

页数：5