Substrates with Diamond Heat Sink for Epitaxial GaN Growth

被引：0
作者：
I. O. Maiboroda
I. A. Chernykh
V. S. Sedov
A. S. Altakhov
A. A. Andreev
Yu. V. Grishchenko
E. M. Kolobkova
A. K. Mart’yanov
V. I. Konov
M. L. Zanaveskin
机构：
[1] National Research Center “Kurchatov Institute”,
[2] Prokhorov General Physics Institute,undefined
[3] Russian Academy of Sciences,undefined
来源：
Technical Physics Letters | 2021年 / 47卷
关键词：
high electron mobility transistor; nitride heterostructure; gallium nitride; silicon; diamond;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：353 / 356
页数：3
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