Substrates with Diamond Heat Sink for Epitaxial GaN Growth

被引：0
|
作者：
I. O. Maiboroda
I. A. Chernykh
V. S. Sedov
A. S. Altakhov
A. A. Andreev
Yu. V. Grishchenko
E. M. Kolobkova
A. K. Mart’yanov
V. I. Konov
M. L. Zanaveskin
机构：
[1] National Research Center “Kurchatov Institute”,
[2] Prokhorov General Physics Institute,undefined
[3] Russian Academy of Sciences,undefined
来源：
Technical Physics Letters | 2021年 / 47卷
关键词：
high electron mobility transistor; nitride heterostructure; gallium nitride; silicon; diamond;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：353 / 356
页数：3
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