Substrates with Diamond Heat Sink for Epitaxial GaN Growth

被引:0
作者
I. O. Maiboroda
I. A. Chernykh
V. S. Sedov
A. S. Altakhov
A. A. Andreev
Yu. V. Grishchenko
E. M. Kolobkova
A. K. Mart’yanov
V. I. Konov
M. L. Zanaveskin
机构
[1] National Research Center “Kurchatov Institute”,
[2] Prokhorov General Physics Institute,undefined
[3] Russian Academy of Sciences,undefined
来源
Technical Physics Letters | 2021年 / 47卷
关键词
high electron mobility transistor; nitride heterostructure; gallium nitride; silicon; diamond;
D O I
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页码:353 / 356
页数:3
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