Numerical simulation of the generation of gain switched laser pulses

被引：0
|
作者：
A. Biernat
G. Kompa
机构：
[1] University of Kassel,Fachgebiet Hochfrequenztechnik
[2] Germany,undefined
来源：
Optical and Quantum Electronics | 1999年 / 31卷
关键词：
device modeling; gain switching; high power; laser radar; picosecond pulses; semiconductor laser;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Gain switched laser pulses with FWHM of 32 ps having an optical peak power exceeding 400 W are generated using low cost single heterostructure (SH) Fabry–Perot laser diodes. To examine and to optimize this effect in detail, a thorough physical device simulation is done. Maxwell's equations together with a simplified version of the Boltzmann transport equation (BTE) and various parameters like carrier recombination and material gain, form a coupled set of nonlinear, inhomogeneous partial differential equations, that are discretized using the finite difference scheme and solved selfconsistently.
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页码：981 / 995
页数：14
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