Resonant gallium level in Pb1−xSnxTe alloys under pressure

被引：0
|
作者：
E. P. Skipetrov
A. V. Golubev
V. E. Slyn’ko
机构：
[1] Moscow State University,Physics Department
[2] Moscow State University,Department of Materials Science
[3] National Academy of Sciences of Ukraine,Institute of Problems in Materials Science
来源：
Semiconductors | 2007年 / 41卷
关键词：
71.20.Nr; 71.55.-i; 72.20.My;
D O I：
暂无
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学科分类号：
摘要：
The effect of pressure on electrical properties of the n-Pb1−xSnxTe alloy (x = 0.21) doped with gallium is studied. A decrease in the free-electron concentration with increasing temperature and an increase in this concentration with increasing pressure are observed; these observations indicate that the Fermi level is pinned at the resonant gallium level. The two-band Kane’s dispersion law and experimental data were used to calculate the pressure dependences of the electron concentration and Fermi level. A diagram of transformation of the charge-carrier energy spectrum in Pb1−xSnxTe:Ga subjected to pressure is suggested; the rate of the shift of the gallium resonant level in reference to the midgap under the effect of pressure is determined.
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页码：145 / 149
页数：4
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