Modeling and simulation of silicon neuron-to-ISFET junction

Modeling and simulation of the silicon neuron-to-ISFET junction is presented. The neuronal electrical activity, extracellularly recorded by the ISFET, was simulated as a function of the neuro-electronic junction parameters such as the seal resistance, double-layer capacitance, and general adhesion conditions. This goal was achieved with a configuration consisting of “silicon neurons” i.e., assemblies of CMOS circuits that mimic the generation of the equivalents of the ionic currents and of the action potentials of real (biological) neurons; “silicon synapses” whose performances simulate those of their biological counterpart; depletion-mode MOSFET-based ISFETs that simulate the signal recording devices; passive component-based circuits that model the neuro-electronic junction. The models of the neuron, synapse, coupling interface, and ISFET were implemented in HSPICE and used to simulate the behavior of the junction between stimulated neurons (described by the compartmental model) and ISFETs.