Improving functional properties of ZnO nanostructures by transition-metal doping: role of aspect ratio

被引:0
作者
Faheem Ahmed
Nishat Arshi
M. S. Anwar
Bon Heun Koo
机构
[1] Changwon National University,School of Materials Science and Engineering
来源
Journal of Sol-Gel Science and Technology | 2014年 / 72卷
关键词
Nanostructures; Chemical synthesis; Magnetic properties; Optical properties; Electron microscopy;
D O I
暂无
中图分类号
学科分类号
摘要
Herein, pure and 3 % transition metals (TM; Cr2+ and Fe2+ ions)-doped ZnO nanostructures with high aspect ratios were prepared by microwave–hydrothermal method. X-ray diffraction, selected area electron diffraction and high resolution transmission electron microscopy analyses revealed that all the TM (Cr2+ and Fe2+ ions)-doped ZnO nanostructures have wurtzite structure and no secondary phase was detected. Field emission scanning electron microscopy and transmission electron microscopy results confirmed a higher aspect ratio and highly crystalline nature of nanostructures. Raman spectra reveled that no defect related mode was observed which indicated that the nanostructures have high quality and negligible defects. The value of bandgap was found to be close to the standard value of ZnO, and increased with the increase in atomic number of TM dopants, which indicated that the Cr2+ and Fe2+ ions were uniformly substituted in ZnO. Room temperature ferromagnetism was observed in all the TM (Cr2+ and Fe2+ ions)-doped ZnO nanostructures and the value of saturation magnetization (Ms) and remanent magnetization (Mr) were increased with TM (Cr2+ and Fe2+ ions) dopants. The modification in the magnetization and Hc by microwave hydrothermal might be due to the high aspect ratio of nanostructures. Hence, these nanostructures pave the way for development of multifunctional spintronics and optoelectronic devices that integrate structural, morphological, optical, and magnetic properties.
引用
收藏
页码:1 / 7
页数:6
相关论文
共 219 条
[1]  
Dietl T(2000)undefined Science 287 1019-undefined
[2]  
Ohno H(2002)undefined Appl Phys Lett 80 4561-undefined
[3]  
Matsukura F(2004)undefined Phys Rev Lett 93 177206-undefined
[4]  
Cibert J(2006)undefined Phys Rev Lett 96 197208-undefined
[5]  
Ferrant D(2005)undefined Appl Phys Lett 87 172505-undefined
[6]  
Jung SW(2012)undefined Curr Appl Phys 12 S174-undefined
[7]  
An SJ(2012)undefined Microelectron Eng 89 129-undefined
[8]  
Yi GC(2012)undefined J Nanosci Nanotechnol 12 1386-undefined
[9]  
Jung CU(2012)undefined J Korean Phys Soc 60 1644-undefined
[10]  
Lee SI(2012)undefined Cryst Eng Comm 14 4016-undefined