Effect of nano-oxide layers on the magnetoresistance of ultrathin permalloy films
被引:0
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作者:
Le Wang
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机构:University of Science and Technology Beijing,Department of Materials Physics and Chemistry
Le Wang
Jinzhong Zhang
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机构:University of Science and Technology Beijing,Department of Materials Physics and Chemistry
Jinzhong Zhang
Lijin Wang
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机构:University of Science and Technology Beijing,Department of Materials Physics and Chemistry
Lijin Wang
机构:
[1] University of Science and Technology Beijing,Department of Materials Physics and Chemistry
来源:
Rare Metals
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2009年
/
28卷
关键词:
material surface and interface;
anisotropic magnetoresistance;
magnetron sputtering;
nano oxide layer;
NiFe;
D O I:
暂无
中图分类号:
学科分类号:
摘要:
Ta/NiFe/Ta ultrathin films with and without nano-oxide layers (NOLs) were prepared by magnetron sputtering followed by a vacuum annealing process. The influence of NOLs on the magnetoresistance (MR) ratio of ultrathin permalloy films was studied. The results show that the influence of grain size and textures on the MR ratio becomes weak when the thickness of the NiFe layer is below 15 nm. A higher MR ratio was observed for the thinner (< 15 nm) NiFe film with NOLs. The MR ratio of a 10 nm NiFe film can be remarkably enhanced by NOLs. The enhanced MR ratio for these ultrathin films can be attributed to the enhanced specular reflection of conduction electrons.
机构:
Toshiba Co Ltd, Corp Res & Dev Ctr, Storage Mat & Devices Lab, Kawasaki, Kanagawa 2128582, JapanToshiba Co Ltd, Corp Res & Dev Ctr, Storage Mat & Devices Lab, Kawasaki, Kanagawa 2128582, Japan
Yuasa, H
Kamiguchi, Y
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机构:
Toshiba Co Ltd, Corp Res & Dev Ctr, Storage Mat & Devices Lab, Kawasaki, Kanagawa 2128582, JapanToshiba Co Ltd, Corp Res & Dev Ctr, Storage Mat & Devices Lab, Kawasaki, Kanagawa 2128582, Japan
Kamiguchi, Y
Sahashi, M
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机构:
Toshiba Co Ltd, Corp Res & Dev Ctr, Storage Mat & Devices Lab, Kawasaki, Kanagawa 2128582, JapanToshiba Co Ltd, Corp Res & Dev Ctr, Storage Mat & Devices Lab, Kawasaki, Kanagawa 2128582, Japan
机构:Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, Beijing 100080, Peoples R China
Feng, YQ
Hou, LN
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机构:Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, Beijing 100080, Peoples R China
Hou, LN
Zhu, T
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机构:
Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, Beijing 100080, Peoples R ChinaChinese Acad Sci, Inst Phys, State Key Lab Magnetism, Beijing 100080, Peoples R China
Zhu, T
Yao, SD
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机构:Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, Beijing 100080, Peoples R China
Yao, SD
Zhan, WS
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机构:Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, Beijing 100080, Peoples R China