Circuit model of uni-traveling carrier photodiode with high power and enhanced bandwidth technique

被引：0
作者：
Senjuti Khanra
Abhirup Das Barman
机构：
[1] University of Calcutta,Institute of Radio Physics and Electronics
[2] IRPE-CU,ITRA project “Mobile Broadband Service Support over Cognitive Radio Networks”
来源：
Optical and Quantum Electronics | 2015年 / 47卷
关键词：
Circuit model; Frequency response; Photodiode; Inter-modulation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An electrical equivalent circuit model of InGaAs/InP uni-travelling carrier photodiode (UTC-PD) is presented. The model is suitable to be built on any electrical circuit simulator to optimize the design parameters of the device. Its performance in terms of bandwidth, linearity, third order inter-modulation distortion and output photo current are investigated. Simulation techniques to measure inter-modulation distortion products and linearity are given in detail. The result obtained by the modeling technique is validated through a comparison with the reported experimental results. It is shown that 3 dB cutoff frequency and output photocurrent can be substantially improved by inserting a small inductance in series with the load together with choosing an optimum absorption layer width in UTC-PD. This technique does not sacrifice the device linearity to a large extent.
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页码：1397 / 1405
页数：8
相关论文
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