A 134-nW Single BJT Bandgap Voltage and Current Reference in 0.18-µm CMOS

被引:0
作者
Hamed Aminzadeh
Dalton Martini Colombo
Mohammad Mahdi Valinezhad
机构
[1] Payame Noor University (PNU),Department of Electrical Engineering
[2] Federal University of Minas Gerais,Electrical Engineering Department
来源
Circuits, Systems, and Signal Processing | 2023年 / 42卷
关键词
Bandgap; Current reference; Line sensitivity; Low-power; Power supply ripple rejection; Temperature coefficient; Voltage reference;
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摘要
This paper presents a sub-microwatt sub-bandgap voltage and current reference that can generate proportional-to-absolute-temperature (PTAT) and complementary-to-absolute-temperature (CTAT) currents concurrently. The voltage reference is derived from the process-insensitive silicon bandgap voltage of a bipolar junction transistor, whereas the current reference is made by combining PTAT and CTAT currents. Line regulation is improved by incorporating cascode devices without an operational amplifier (opamp). Fabricated in a standard 0.18-µm CMOS process, the proposed bandgap reference occupies an active area of 0.4 mm2. The current and voltage reference (IREF\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${I}_{\mathrm{REF}}$$\end{document} and VREF\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${V}_{\mathrm{REF}}$$\end{document}) are measured as 170 mV and 21 nA, respectively, while the start-up settling response is measured as 20 ms at room temperature. The average temperature coefficient of IREF\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${I}_{\mathrm{REF}}$$\end{document} and VREF\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${V}_{\mathrm{REF}}$$\end{document} is 79.8 ppm/°C and 87.93 ppm/°C across the temperature range from − 40 to 120 °C, respectively. The power consumption is 134 nW at the minimum supply voltage of 1.2 V. The power supply ripple rejection of VREF\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${V}_{\mathrm{REF}}$$\end{document} is measured as − 10 dB at 100 kHz without any filtering capacitor, when the 1.6 V input line voltage is distorted by a 300-mVp-p ripple. The measured line sensitivity of the voltage and current reference is 0.142%/V and 0.757%/V, respectively.
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页码:1293 / 1311
页数:18
相关论文
共 141 条
  • [1] Aminzadeh H(2020)All–MOS self-powered subthreshold voltage reference with enhanced line regulation AEU-Int. J. Electron. Commun. 122 282-284
  • [2] Aminzadeh H(2020)Self-biased nano-power four-transistor current and voltage reference with a single resistor Electron. Lett. 56 1082-1100
  • [3] Aminzadeh H(2021)Subthreshold reference circuit with curvature compensation based on the channel length modulation of MOS devices Int. J. Circuit Theory Appl. 50 670-674
  • [4] Banba H(1999)A CMOS bandgap reference circuit with sub-1-V operation IEEE J. Solid-State Circuits 34 85-102
  • [5] Shiga H(2003)An integrated CAD methodology for yield enhancement of VLSI CMOS circuits including statistical device variations Analog Integr. Circ. Sig. Process 37 582-596
  • [6] Umezawa A(1999)Parametric yield formulation of MOS IC's affected by mismatch effect IEEE Trans. Comput. Aid. Des. Integr. Circuits Syst. 18 680-685
  • [7] Miyaba T(2002)Layout-based statistical modeling for the prediction of the matching properties of MOS transistors IEEE Trans. Circuits Syst. I Fundam. Theory Appl. 49 779-795
  • [8] Tanzawa T(2018)A portable class of 3-transistor current references with low-power sub-0.5 V operation Int. J. Circuit Theory Appl. 46 3656-3669
  • [9] Atsumi S(2020)A 0.5-V supply, 36 nW bandgap reference with 42 ppm/°C average temperature coefficient within −40 °C to 120 °C IEEE Trans. Circuits Syst. I Regul. Pap. 67 151-154
  • [10] Conti M(2003)A low-voltage low-power voltage reference based on subthreshold MOSFETs IEEE J. Solid-State Circuits 38 101-155