Aluminum-Catalyzed Growth of ‹110› Silicon Nanowires

被引:0
作者
Mel Hainey
Sarah M. Eichfeld
Haoting Shen
Joanne Yim
Marcie R. Black
Joan M. Redwing
机构
[1] The Pennsylvania State University,Department of Materials Science, Materials Research Institute
[2] Bandgap Engineering Inc,undefined
来源
Journal of Electronic Materials | 2015年 / 44卷
关键词
Silicon; nanowire; ‹110› growth direction; chemical vapor deposition;
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中图分类号
学科分类号
摘要
The growth of silicon nanowires in the ‹110› direction is reported using a vapor–liquid–solid mechanism with aluminum as the catalyst and SiH4 as the source gas in a low pressure chemical vapor deposition process. The effects of growth conditions on the yield of ‹110› versus ‹111› nanowires were investigated. Increasing reactor pressure beyond 300 Torr was found to improve ‹110› wire yield by suppressing vapor–solid thin film deposition on the nanowire sidewalls during growth that promoted nanowire kinking. Additionally, ‹110› growth was found to occur only at temperatures below the Al-Si eutectic temperature (577°C). At temperatures approximately equal to 577°C or higher, the preferential growth direction was observed to shift from ‹110› to ‹111›. The growth of ‹110› Si nanowires at sub-eutectic temperatures was attributed to a reduction in the silicon concentration in the catalyst droplet which promotes (110) surface nucleation and subsequent growth in the ‹110› direction.
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页码:1332 / 1337
页数:5
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