Palladium-vacancy pairs in p-type and n-type germanium

被引:0
作者
A. A. Abiona
W. Kemp
H. Timmers
机构
[1] The University of New South Wales,School of Physical, Environmental and Mathematical Sciences
来源
Hyperfine Interactions | 2013年 / 221卷
关键词
Semiconductor defects; Germanium; Metal induced crystallization; Perturbed angular correlation;
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摘要
Time differential perturbed angular correlation spectroscopy was performed for n-type and p-type germanium samples that had been recoil-implanted with the probe 100Pd/100Rh. Two different measurements with the detectors aligned along <100> and <110> crystallographic directions of germanium confirm that the palladium probe pairs with the nearest neighbour vacancy and not a dopant. The pairs interact with a coupling constant of υQ = 10.7(2) MHz and this agrees with what has been observed in undoped Ge. This further suggests that the palladium pairs with a vacancy in germanium, doped or un-doped. It was also observed that there are more Pd-V pairs in Ga-doped than there are in Sb-doped Ge. DFT calculations of the binding energies of the Pd-defect complexes support the experimental observations.
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页码:65 / 72
页数:7
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