Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

被引:82
|
作者
Mak, Kin Fai [1 ]
Shan, Jie [1 ]
机构
[1] Penn State Univ, Dept Phys, 104 Davey Lab, University Pk, PA 16802 USA
基金
美国国家科学基金会;
关键词
GIANT BANDGAP RENORMALIZATION; LIGHT-EMITTING-DIODES; SINGLE QUANTUM-DOT; PHOTOCURRENT GENERATION; 2-DIMENSIONAL MATERIALS; GRAPHENE PHOTODETECTOR; VALLEY POLARIZATION; ELECTRICAL CONTROL; LAYER MOS2; MONOLAYER;
D O I
10.1038/NPHOTON.2015.282
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Recent advances in the development of atomically thin layers of van der Waals bonded solids have opened up new possibilities for the exploration of 2D physics as well as for materials for applications. Among them, semiconductor transition metal dichal-cogenides, MX2 (M = Mo, W; X = S, Se), have bandgaps in the near-infrared to the visible region, in contrast to the zero bandgap of graphene. In the monolayer limit, these materials have been shown to possess direct bandgaps, a property well suited for photonics and optoelectronics applications. Here, we review the electronic and optical properties and the recent progress in applications of 2D semiconductor transition metal dichalcogenides with emphasis on strong excitonic effects, and spin-and valley-dependent properties.
引用
收藏
页码:216 / 226
页数:11
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