Influence of Sn, in on ac electrical conductivity and dielectric relaxation behavior of Se–Te chalcogenide glass films

Thin films of Se85Te10 X5 (= Sn, In) were synthesized by the thermal evaporation technique. Both Ac and dielectric measurements were carried out in the frequency range (102–105 Hz) and the temperature range (303–333 K). The result of ac conductivity was found to follow the power law: (ac(ω) = A ωs with s < 1) which is interpreted with the correlated barrier hopping model (CBH). The Ac conductivity exhibited a thermally activated behavior with an activation energy reduces with temperature. Both the dielectric constant ε1 (ω) and the dielectric loss (ε2(ω)) reduce with the frequency and rise with raising temperature over the examined ranges. Some parameters as Maximum barrier height WM, hopping energy WH, the localized state density NE(f) and relaxation time τ are estimated and their change with Sn/In addition is discussed. Sn addition improves the conductivity of Se–Te than In addition.