Calculation of the temperature distribution at the HPHT growing of diamond single crystals in cells with two growth layers

被引：0

作者：

A. V. Burchenia

V. V. Lysakovs’kii

S. O. Gordeyev

S. O. Ivakhnenko

A. M. Kutsai

O. M. Suprun

机构：

[1] National Academy of Sciences of Ukraine,Bakul Institute for Superhard Materials

来源：

Journal of Superhard Materials | 2017年 / 39卷

关键词：

diamond; temperature gradient method; finite element method; high-pressure apparatus; distribution of the temperatures; IR spectroscopy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Finite element method was used to calculate the distribution of temperatures in growth cells of the toroid TC-40 -type HPA. The experimental investigations of the process of growing type IIa diamond single crystals were performed in high-pressure cells with two growth layers. It is shown that in using the cell materials having appropriate properties and defined configuration of the system of the resistive heating the temperature gradients are 5.4–5.6°C/mm and the growth rate is 2.46 mg/h. The total weight of obtained structurally perfect type IIa diamond single crystals in the upper and lower growth layers is 1.18 and 1.13 carats, respectively, the nitrogen content in all grown crystals is 1–3 ppt.

引用

页码：149 / 154

页数：5

共 21 条

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