Sub-surface Damage of Ultra-Thin Monocrystalline Silicon Wafer Induced by Dry Polishing

[1] Liu Y(2016)Scaling effect of interfacial reaction on intermetallic compound formation in Sn/Cu pillar down to 1 µm diameter Acta Mater. 117 146-152

[2] Chu Y-C(2000)Ultra-thin electronic device package IEEE Trans. Adv. Packag. 23 22-26

[3] Tu KN(2018)Surface damage mechanism of monocrystalline silicon during single point diamond grinding Wear 396–397 48-55

[4] Chen KY(2015)Diamond machining of silicon: a review of advances in molecular dynamics simulation Int. J. Mach. Tools Manuf. 88 131-164

[5] Zenner RL(2017)Influence of Si wafer thinning processes on (sub)surface defects Appl. Surf. Sci. 404 82-87

[6] Ameson M(2018)Ultra-thin chips for high-performance flexible electronics npj Flexible Electron. 2 8-71

[7] Mountain D(2013)Advanced wafer thinning technology and feasibility test for 3D integration Microelectron. Eng. 107 65-18

[8] Zhang Q(2007)Microstructure studies of the grinding damage in monocrystalline silicon wafers Rare Met. 26 13-180

[9] Fu Y(2011)Phase transformation of single crystal silicon induced by grinding with ultrafine diamond grits Scr. Mater. 64 177-581

[10] Su H(2019)Analytical prediction for depth of subsurface damage in silicon wafer due to self-rotating grinding process Curr. Appl. Phys. 19 570-1440

[1] Liu Y(2016)Scaling effect of interfacial reaction on intermetallic compound formation in Sn/Cu pillar down to 1 µm diameter Acta Mater. 117 146-152

[2] Chu Y-C(2000)Ultra-thin electronic device package IEEE Trans. Adv. Packag. 23 22-26

[3] Tu KN(2018)Surface damage mechanism of monocrystalline silicon during single point diamond grinding Wear 396–397 48-55

[4] Chen KY(2015)Diamond machining of silicon: a review of advances in molecular dynamics simulation Int. J. Mach. Tools Manuf. 88 131-164

[5] Zenner RL(2017)Influence of Si wafer thinning processes on (sub)surface defects Appl. Surf. Sci. 404 82-87

[6] Ameson M(2018)Ultra-thin chips for high-performance flexible electronics npj Flexible Electron. 2 8-71

[7] Mountain D(2013)Advanced wafer thinning technology and feasibility test for 3D integration Microelectron. Eng. 107 65-18

[8] Zhang Q(2007)Microstructure studies of the grinding damage in monocrystalline silicon wafers Rare Met. 26 13-180

[9] Fu Y(2011)Phase transformation of single crystal silicon induced by grinding with ultrafine diamond grits Scr. Mater. 64 177-581

[10] Su H(2019)Analytical prediction for depth of subsurface damage in silicon wafer due to self-rotating grinding process Curr. Appl. Phys. 19 570-1440