Trap State Effects in PbS Colloidal Quantum Dot Exciton Kinetics Using Photocarrier Radiometry Intensity and Temperature Measurements

被引:0
作者
Jing Wang
Andreas Mandelis
Alexander Melnikov
Qiming Sun
机构
[1] University of Electronic Science and Technology of China,School of Optoelectronic Information
[2] University of Toronto,Center for Advanced Diffusion
来源
International Journal of Thermophysics | 2016年 / 37卷
关键词
Charge transport; PbS colloidal quantum dots; Photocarrier radiometry; Temperature response; Trap states;
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摘要
Colloidal quantum dots (CQDs) have attracted significant interest for applications in electronic and optoelectronic devices such as photodetectors, light-emitting diodes, and solar cells. However, a poor understanding of charge transport in these nanocrystalline films hinders their practical applications. The photocarrier radiometry (PCR) technique, a frequency-domain photoluminescence method spectrally gated for monitoring radiative recombination photon emissions while excluding thermal infrared photons due to non-radiative recombination, has been applied to PbS CQD thin films for the analysis of charge transport properties. Linear excitation intensity responses of PCR signals were found in the reported experimental conditions. The type and influence of trap states in the coupled PbS CQD thin film were analyzed with PCR temperature- and time-dependent results.
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[1]  
Clifford JP(2009)undefined Nat. Nanotechnol. 4 40-undefined
[2]  
Konstantatos G(2006)undefined Nature 442 180-undefined
[3]  
Johnston KW(2002)undefined Nature 420 800-undefined
[4]  
Hoogland S(2005)undefined Nano Lett. 5 1039-undefined
[5]  
Levina L(2008)undefined Appl. Phys. Lett. 92 151115-undefined
[6]  
Sargent EH(2005)undefined Nat. Mater. 4 138-undefined
[7]  
Konstantatos G(2006)undefined J. Am. Chem. Soc. 128 3241-undefined
[8]  
Howard I(2005)undefined Nano Lett. 5 865-undefined
[9]  
Fischer A(2011)undefined Appl. Phys. Lett. 99 111102-undefined
[10]  
Hoogland S(2010)undefined Phys. Rev. B 82 125320-undefined